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发表于 2014-9-7 11:51:53 |只看该作者 |倒序浏览
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题名: Frontiers in Electronics Advanced Modeling of Nanoscale Electron Devices
作者: Benjamin Iniguez(ed.) ; Tor A. Fjeldly(ed.)
出版社: World Scientific Publishing Company;
出版日期: January 2014
ISBN: 9789814583190
附属页: 齐全
书签:
格式: 清晰PDF
内容简介: This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
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