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速递书局
| 封面: |
 |
| 题名: |
Frontiers in Electronics Advanced Modeling of Nanoscale Electron Devices |
| 作者: |
Benjamin Iniguez(ed.) ; Tor A. Fjeldly(ed.) |
| 出版社: |
World Scientific Publishing Company; |
| 出版日期: |
January 2014 |
| ISBN: |
9789814583190 |
| 附属页: |
齐全 |
| 书签: |
有 |
| 格式: |
清晰PDF |
| 内容简介: |
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels. |
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发表于 2014-9-7 11:51:53
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