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题名 | Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers | 链接 | https://apps.webofknowledge.com/OutboundService.do?&SID=T2TfkIoHwu3ZgY4ndc6&publisher_id=DOISource&toPID=DOISource&URL=https%3A%2F%2Fgateway.webofknowledge.com%2Fgateway%2FGateway.cgi%3FGWVersion%3D2%26SrcAuth%3DDOISource%26SrcApp%3DUA%26KeyAID%3D10.1088%252F1361-6463%252F50%252F1%252F015104%26DestApp%3DDOI%26SrcAppSID%3DT2TfkIoHwu3ZgY4ndc6%26SrcJTitle%3DJOURNAL%2520OF%2520PHYSICS%2520D-APPLIED%2520PHYSICS&product=UA&action=go&mode=transferToPublisher&highlighted_tab=UA&link_type=FULL_TEXT&PMID=&qid=1&doc=3&excludeEventConfig=ExcludeIfFromFullRecPage |
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