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速递书局
封面: |
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题名: |
Frontiers in Electronics Advanced Modeling of Nanoscale Electron Devices |
作者: |
Benjamin Iniguez(ed.) ; Tor A. Fjeldly(ed.) |
出版社: |
World Scientific Publishing Company; |
出版日期: |
January 2014 |
ISBN: |
9789814583190 |
附属页: |
齐全 |
书签: |
有 |
格式: |
清晰PDF |
内容简介: |
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels. |
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