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速递书局
| 封面: |
 |
| 题名: |
Graphene: Properties, Preparation Characterisation and Devices |
| 作者: |
V. Skakalova, A. Kaiser |
| 出版社: |
ELSEVIER |
| 出版日期: |
2014 |
| ISBN: |
0857095080 |
| 附属页: |
齐全 |
| 书签: |
有 |
| 格式: |
清晰PDF |
| 内容简介: |
Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics. Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS). Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries. * Explores the grapheme preparation techniques, including epitaxial growth on silicon carbide, chemical vapor deposition (CVD), chemical derivation, and electrochemical exfoliation* Focuses on the characterization of graphene using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy* A comprehensive resource for academics, materials scientists, and electrical engineers
Table of Contents
Part 1 Preparation of graphene: Epitaxial growth of graphene on silicon carbide (SiC); Chemical vapour deposition (CVD) growth of graphene films; Chemically derived graphene; Graphene produced by electrochemical exfoliation. 1
Part 2 Characterization of graphene: Transmission electron microscopy (TEM) of graphene; Scanning tunneling microscopy (STM) of graphene; Raman spectroscopy of graphene; Photoemission of low-dimensional carbon systems. 99
Part 3 Electronic transport properties of graphene and graphene devices: Electronic transport in graphene: Towards high mobility; Electronic transport in bilayer graphene; Effect of adsorbents on electronic transport in graphene; Single-charge transport in graphene; Graphene |
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发表于 2014-3-30 00:44:10
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