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题名 | Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area | 链接 | http://xueshu.baidu.com/s?wd=paperuri%3A%28bebcf68197bba9852121c0d031769a1a%29&filter=sc_long_sign&tn=SE_xueshusource_2kduw22v&sc_vurl=http%3A%2F%2Fpubs.acs.org%2Fdoi%2Fabs%2F10.1021%2Facsami.6b05657&ie=utf-8&sc_us=17071557357746164761 |
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