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题名 | Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current | 链接 | http://xueshu.baidu.com/s?wd=paperuri%3A%28ab13726327f4c08b0bde636904f8b5d1%29&filter=sc_long_sign&tn=SE_xueshusource_2kduw22v&sc_vurl=http%3A%2F%2Fscitation.aip.org%2Fcontent%2Faip%2Fjournal%2Fjap%2F119%2F24%2F10.1063%2F1.4955063&ie=utf-8&sc_us=9150872812246504953 |
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