题名 | Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory |
作者 | Kuan-Chang Chang ; Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan ; Tsung-Ming Tsai ; Ting-Chang Chang ; Kai-Huang Chen |
杂志 | Electron Device Letters, IEEE (Volume:35 , Issue: 5 ) |
年|卷|期 | Electron Device Letters, IEEE (Volume:35 , Issue: 5 ) |
页码 | Electron Device Letters, IEEE (Volume:35 , Issue: 5 ) |
链接 | http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6775286&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6775286 |