| 题名 | Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory |
| 作者 | Kuan-Chang Chang ; Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan ; Tsung-Ming Tsai ; Ting-Chang Chang ; Kai-Huang Chen more authors |
| 杂志 | Electron Device Letters, IEEE (Volume:35 , Issue: 5 ) |
| 年|卷|期 | Electron Device Letters, IEEE (Volume:35 , Issue: 5 ) |
| 页码 | 530 - 532 |
| 链接 | http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6775286&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6775286 |