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标题: Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access [打印本页]
作者: winter    时间: 2014-12-19 19:03
标题: Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access
题名Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
作者Tian-Jian Chu ; Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Tsung-Ming Tsai ; Ting-Chang Chang ; Kuan-Chang Chang  more authors
杂志Electron Device Letters, IEEE ..
年|卷|期Electron Device Letters, IEEE  (Volume:35 ,  Issue: 2 )
页码217 - 219
链接http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6701322&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6701322

作者: smart505    时间: 2014-12-19 19:03
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作者: smart505    时间: 2014-12-19 19:05
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