题名 | Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy |
作者 | Tatsuo Yoshinobu, Hideaki Mitsui, Iwao Izumikawa, Takashi Fuyuki and Hiroyuki Matsunami |
杂志 | Appl. Phys. Lett. |
年|卷|期 | 60,1992 |
页码 | 824 |
链接 | http://scitation.aip.org/content/aip/journal/apl/60/7/10.1063/1.107430 |
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