该项技术可在常温下进行，其制备的石墨烯半导体仅为此前IBM公司所制纳米带的五分之一宽。该技术可高效、可控地制备石墨烯半导体，为石墨烯规模化工业生产带来可能，同时也使新一代高密度集成电路的制备不再遥不可及。作者: small 时间: 2012-11-23 08:33
A wide-bandgap metal–semiconductor–metal nanostructure made entirely from graphene
Present methods for producing semiconducting–metallic graphene networks suffer from stringent lithographic demands, process-induced disorder in the graphene, and scalability issues. Here we demonstrate a one-dimensional metallic–semiconducting–metallic junction made entirely from graphene. Our technique takes advantage of the inherent, atomically ordered, substrate–graphene interaction when graphene is grown on SiC, in this case patterned SiC steps, and does not rely on chemical functionalization or finite-size patterning. This scalable bottom-up approach allows us to produce a semiconducting graphene strip whose width is precisely defined to within a few graphene lattice constants, a level of precision beyond modern lithographic limits, and which is robust enough that there is little variation in the electronic band structure across thousands of ribbons. The semiconducting graphene has a topographically defined few-nanometre-wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet.