利用此方法，他们还成功演示了纳米互联电路和场效应晶体管器件，器件的迁移率可达20cm2/Vs，明显优于目前常用的导电聚合物和非晶硅场效应管器件的迁移率性能。此外，他们通过理论计算，揭示了这种局域还原反应的微观机理。这一技术具有图形和器件可直写、线条宽度可控、制备条件温和（任意衬底、常压、近室温）、同现有微电子技术兼容等显著优点，因而有望推动石墨烯纳米器件、电路与集成的最终实现和应用。作者: small 时间: 2012-11-21 10:58
Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography
Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >104 S m−1 are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).