题名 | Impact of Rapid Crystallization of Si Using Nickel-Metal-Induced Lateral Crystallization on Thin-Film Transistor Characteristics |
作者 | Sho Nagata, Gou Nakagawa and Tanemasa Asano |
杂志 | Jpn. J. Appl. Phys. |
年|卷|期 | 2012, 51 |
页码 | 02BH04 |
链接 | http://iopscience.iop.org/1347-4065/51/2S/02BH04/pdf/1347-4065_51_2S_02BH04.pdf |
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