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标题: Electrical characteristics of MIS-structures with ALD layer ALO,HFO and.. [打印本页]

作者: (L)CVeronica 时间: 2014-2-14 00:56
标题: Electrical characteristics of MIS-structures with ALD layer ALO,HFO and..

题名	Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates
作者	F. Campabadal1, J. M. Rafí, M. Zabala, O. Beldarrain, A. Faigón, H. Castán, A. Gómez, H. García and S. Dueñas
杂志	J. Vac. Sci. Technol. B
年\|卷\|期	29
页码	01AA07
链接	http://scitation.aip.org/content/avs/journal/jvstb/29/1/10.1116/1.3532544

Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates

many thanks

作者: gyrowheel 时间: 2014-2-14 00:56
http://1000eb.com/tnp2

作者: gyrowheel 时间: 2014-2-14 01:18
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