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标题: Retention in nonvolatile silicon transistors with an organic ferroelectric gate [打印本页]

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作者: shixiwu    时间: 2013-12-30 17:11
标题: Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Retention in nonvolatile silicon transistors with an organic ferroelectric gate
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作者: qiuqiu    时间: 2013-12-30 17:13
Retention in nonvolatile silicon transistors with an organic ferroelectric gate

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