题名 | Secondary ion mass spectrometry analysis of ultrathin impurity layers in semiconductors and their use in quantification, instrumental assessment, and fundamental measurements |
作者 | M. G. Dowsett, R. D. Barlow, and P. N. Allen |
杂志 | J. Vac. Sci. Technol. B |
年|卷|期 | 1994, 12 |
页码 | 186 |
链接 | http://avspublications.org/jvstb/resource/1/jvtbd9/v12/i1/p186_s1?isAuthorized=no |
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