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标题: Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices [打印本页]

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作者: lzsz    时间: 2021-12-10 12:45
标题: Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices

题名	Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
链接	https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.202100218

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作者: fenavi    时间: 2021-12-10 12:45

1. https://we.tl/t-QTTGPq0jJX

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