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标题: Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices [打印本页]

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作者: lzsz    时间: 2021-5-30 09:04
标题: Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices

题名	Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
链接	https://onlinelibrary.wiley.com/doi/10.1002/pssa.202100218

Wiley

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作者: fenavi    时间: 2021-5-30 09:04

1. https://app.nihaocloud.com/f/fc390626768949e5b027/?dl=1

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