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标题: The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties o... [打印本页]

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作者: tookey0116    时间: 2017-5-2 14:06
标题: The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties o...

题名	The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories
链接	http://pubs.acs.org/doi/abs/10.1021/acs.langmuir.7b00479

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作者: markjackson    时间: 2017-5-2 14:06
http://disk.680.com/zuU3ei

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