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标题: Low power NiN-based resistive switching memory device using Ti doping [打印本页]

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作者: tookey0116    时间: 2016-12-12 15:39
标题: Low power NiN-based resistive switching memory device using Ti doping

题名	Low power NiN-based resistive switching memory device using Ti doping
链接	http://scitation.aip.org/content/aip/journal/apl/109/18/10.1063/1.4966951

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作者: pnas2009    时间: 2016-12-12 15:39
http://pan.baidu.com/s/1cj8sAM

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