题名 | Performance of ultra-thin HfO2-based MIM devices after oxygen modulation and post-metallization annealing in N-2 |
链接 | http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532993/abstract;jsessionid=01E38E2D2E65410148F305500F63F3EE.f02t01 |
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