题名 | Forming-free, bipolar resistivity switching characteristics of fully transparent resistive random access memory with IZO/α-IGZO/ITO structure |
链接 | http://iopscience.iop.org/article/10.1088/0022-3727/49/38/385102/meta |
欢迎光临 科研速递论坛 (http://expaper.cn/) | Powered by Discuz! X2.5 |