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标题: Resistive switching characteristic and uniformity of low-power HfO x -based r... [打印本页]

作者: tookey0116 时间: 2016-10-20 10:45
标题: Resistive switching characteristic and uniformity of low-power HfO x -based r...

题名	Resistive switching characteristic and uniformity of low-power HfO x -based resistive random access memory with the BN insertion layer
链接	http://iopscience.iop.org/article/10.1088/1674-1056/25/10/107302/meta;jsessionid=6242ED6AB654B5BF6484D2A5E449B2FC.c1.iopscience.cld.iop.org

作者: yunzhongfeng 时间: 2016-10-20 10:45
http://disk.680.com/vuieIb

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