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标题: Improved characteristics of amorphous indium-gallium-zinc-oxide-based resisti... [打印本页]

作者: tookey0116 时间: 2016-10-18 08:57
标题: Improved characteristics of amorphous indium-gallium-zinc-oxide-based resisti...

题名	Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing
链接	http://scitation.aip.org/content/aip/journal/apl/109/7/10.1063/1.4961311

作者: yunzhongfeng 时间: 2016-10-18 08:57
http://disk.680.com/imeYfi

作者: yunzhongfeng 时间: 2016-10-18 08:58
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