题名 | Record Resistance Ratio and Bipolar/Unipolar Resistive Switching Characteristics of Memory Device Using Germanium Oxide Solid Electrolyte |
链接 | http://iopscience.iop.org/article/10.1143/JJAP.51.04DD11/pdf |
欢迎光临 科研速递论坛 (http://expaper.cn/) | Powered by Discuz! X2.5 |