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标题: Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory... [打印本页]

作者: tookey0116 时间: 2016-9-18 09:39
标题: Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory...

题名	Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory films
链接	http://scitation.aip.org/content/avs/journal/jvstb/34/4/10.1116/1.4953084

作者: duzhong 时间: 2016-9-18 09:39
链接: http://pan.baidu.com/s/1gfK7ugV 密码: jw1s

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