标题: Reducing operation voltages by introducing a low-k switching layer in indium... [打印本页] 作者: tookey0116 时间: 2016-9-13 08:38 标题: Reducing operation voltages by introducing a low-k switching layer in indium...
题名
Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory