科研速递论坛

标题: Fabrication of Transparent AZO/ZnO/ITO Resistive Random Access Memory Devices... [打印本页]

作者: tookey0116 时间: 2016-9-6 13:39
标题: Fabrication of Transparent AZO/ZnO/ITO Resistive Random Access Memory Devices...

题名	Fabrication of Transparent AZO/ZnO/ITO Resistive Random Access Memory Devices and Their ZnO Active Layer Deposition Temperature-Dependent Switching Characteristics
链接	http://www.ingentaconnect.com/contentone/asp/jnn/2016/00000016/00000010/art00028

作者: xujdai 时间: 2016-9-6 13:39
https://yunpan.cn/cMIDsHbG3RpYE 访问密码 a862

欢迎光临科研速递论坛 (http://expaper.cn/)