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标题: Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices [打印本页]

作者: tookey0116 时间: 2016-9-2 07:26
标题: Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

题名	Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices
链接	http://ecst.ecsdl.org/content/72/2/25.short

作者: pnas2009 时间: 2016-9-2 07:26
http://pan.baidu.com/s/1eS4Z8xs

作者: pnas2009 时间: 2016-9-2 08:16
http://pan.baidu.com/s/1eS4Z8xs

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