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标题: Resistive switching characteristics and mechanisms in silicon oxide memory de... [打印本页]

作者: tookey0116 时间: 2016-8-26 13:36
标题: Resistive switching characteristics and mechanisms in silicon oxide memory de...

题名	Resistive switching characteristics and mechanisms in silicon oxide memory devices
链接	http://xueshu.baidu.com/s?wd=paperuri%3A%28040d8d3f4dd88e0ab1ddc63332b5853d%29&filter=sc_long_sign&tn=SE_xueshusource_2kduw22v&sc_vurl=http%3A%2F%2Fdx.doi.org%2F10.1515%2Fpsr-2016-0011&ie=utf-8&sc_us=3353557219207901181

作者: vip 时间: 2016-8-26 13:36
http://qupb.pw/owncloud/index.php/s/rXMrNUvXiF3PZlp

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