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标题: Reducing operation voltages by introducing a low-k switching layer in indium... [打印本页]

作者: tookey0116 时间: 2016-8-11 10:19
标题: Reducing operation voltages by introducing a low-k switching layer in indium...

题名	Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory
链接	http://xueshu.baidu.com/s?wd=paperuri%3A%28d6d267b59df4ec1c0e454e59774cac83%29&filter=sc_long_sign&tn=SE_xueshusource_2kduw22v&sc_vurl=http%3A%2F%2Fiopscience.iop.org%2Farticle%2F10.7567%2FAPEX.9.061501%2Fmeta&ie=utf-8&sc_us=325098401188457884

作者: vip 时间: 2016-8-11 10:19
本帖最后由 vip 于 2016-8-11 10:33 编辑

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