题名 | Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window |
链接 | http://xueshu.baidu.com/s?wd=paperuri%3A%285e44a741d8b5087e315d713604624cdc%29&filter=sc_long_sign&tn=SE_xueshusource_2kduw22v&sc_vurl=http%3A%2F%2Fonlinelibrary.wiley.com%2Fdoi%2F10.1002%2Faelm.201500370%2Fpdf&ie=utf-8&sc_us=9348489796233609408 |
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