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标题: Improved resistive switching properties in SiOx-based resistive random-access... [打印本页]

作者: tookey0116 时间: 2016-6-25 10:28
标题: Improved resistive switching properties in SiOx-based resistive random-access...

题名	Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer
链接	http://scitation.aip.org/content/avs/journal/jvstb/34/2/10.1116/1.4943560

作者: zxwy77 时间: 2016-6-25 10:28
http://share.weiyun.com/8f26819865061aa22acf8079b57c9438

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