题名 | Highly Transparent Bipolar Resistive Switching Memory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In–Ga–Zn–O as Electrode |
链接 | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7217829&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D7217829 |
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