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标题: Ru doping enhanced resistive switching behavior in InGaZnO thin films [打印本页]

作者: tookey0116    时间: 2016-6-7 08:07
标题: Ru doping enhanced resistive switching behavior in InGaZnO thin films
题名Ru doping enhanced resistive switching behavior in InGaZnO thin films
链接http://pubs.rsc.org/en/Content/ArticleLanding/2016/RA/C6RA02174C#!divAbstract


作者: wjw2016    时间: 2016-6-7 08:07
http://pan.baidu.com/s/1cmLYmq




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