题名 | Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models |
链接 | http://pubs.rsc.org/en/Content/ArticleLanding/2016/CP/C6CP00916F#!divAbstract |
欢迎光临 科研速递论坛 (http://expaper.cn/) | Powered by Discuz! X2.5 |