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标题: Sub-10 nm low current resistive switching behavior in hafnium oxide stack [打印本页]

作者: tookey0116 时间: 2016-5-9 14:40
标题: Sub-10 nm low current resistive switching behavior in hafnium oxide stack

题名	Sub-10 nm low current resistive switching behavior in hafnium oxide stack
链接	http://scitation.aip.org/content/aip/journal/apl/108/12/10.1063/1.4944841

作者: majia_jiama 时间: 2016-5-9 14:40
http://disk.680.com/QveAF3

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