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标题: Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell... [打印本页]

作者: tookey0116 时间: 2016-3-24 15:10
标题: Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell...

题名	Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications
链接	http://iopscience.iop.org/article/10.1088/0268-1242/30/7/075002/meta

作者: majia_jiama 时间: 2016-3-24 15:10
链接: http://pan.baidu.com/s/1c1qwGQs 密码: bmby

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