科研速递论坛

标题: Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices [打印本页]

作者: tookey0116 时间: 2016-1-13 13:24
标题: Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices

题名	Evolution of Filament Formation in Ni/HfO2/SiOx/Si-Based RRAM Devices
链接	http://onlinelibrary.wiley.com/doi/10.1002/aelm.201500130/abstract

作者: abcbanana 时间: 2016-1-13 13:24
get.pdf

欢迎光临科研速递论坛 (http://expaper.cn/)