科研速递论坛

标题: Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonl... [打印本页]

作者: tookey0116 时间: 2016-1-5 12:28
标题: Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonl...

题名	Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics
链接	http://chinesesites.library.ingentaconnect.com/content/asp/jnn/2015/00000015/00000010/art00029?token=00541c241a2a102616c0437a63736a6f356b414c7e763b445074766f644a467c79675d7c4e724770f389

作者: duzhong 时间: 2016-1-5 12:28
链接: http://pan.baidu.com/s/1o7eHKls 密码: m74v

欢迎光临科研速递论坛 (http://expaper.cn/)