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标题: Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure [打印本页]

作者: tookey0116 时间: 2015-11-17 13:06
标题: Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

题名	Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure
链接	http://pubs.rsc.org/en/Content/ArticleLanding/2015/RA/C5RA15993H#!divAbstract

作者: pnas2009 时间: 2015-11-17 13:06
http://pan.baidu.com/s/1gd9BLkB

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