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标题: Resistive switching characteristics of Si3N4-based resistive-switching random... [打印本页]

作者: tookey0116 时间: 2015-11-5 12:32
标题: Resistive switching characteristics of Si3N4-based resistive-switching random...

题名	Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
链接	http://scitation.aip.org/content/aip/journal/apl/106/21/10.1063/1.4921926

作者: wwjjdd 时间: 2015-11-5 12:32
http://1000eb.com/1hm0q

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